HY27UH08AG5M Datasheet, PDF (24/49 Pages) Hynix Semiconductor – 16Gbit (2Gx8bit) NAND Flash

HY27UH08AG(5/D)M Series
16Gbit (2Gx8bit) NAND Flash
IO
Page
Program
Block
Erase
Cache
Program
Read
Cache
Read
CODING
0
Pass / Fail
Pass / Fail
Pass / Fail (N)
NA
Pass: ‘0’ Fail: ‘1’
1
NA
NA
Pass / Fail (N-1)
NA
Pass: ‘0’ Fail: ‘1’
(Only for Cache Program,
else Don’t care)
2
NA
NA
NA
NA
-
3
NA
NA
NA
NA
-
4
NA
NA
NA
NA
-
5 Ready/Busy
Ready/Busy
P/E/R
Controller Bit
Ready/Busy
P/E/R
Controller Bit
Active: ‘0’ Idle: ‘1’
6
Ready/Busy
Ready/Busy
Cache Register
Free
Ready/Busy
Ready/Busy
Busy: ‘0’ Ready’: ‘1’
7 Write Protect Write Protect Write Protect Write Protect
Protected: ‘0’
Not Protected: ‘1’
Table 13: Status Register Coding
DEVICE IDENTIFIER CYCLE
1st
2nd
3rd
4th
DESCRIPTION
Manufacturer Code
Device Identifier
Internal chip number, cell Type, Number of Simultaneously Programmed pages.
Page Size, Block Size, Spare Size, Organization
Table 14: Device Identifier Coding
Part Number
HY27UH08AG5M
HY27UH08AGDM
Voltage
Bus Width
1st cycle
(Manufacture Code)
2nd cycle
(Device Code)
3rd Cycle
4th Cycle
3.3V
x8
ADh
D3h
C1h
95h
3.3V
x8
ADh
D3h
C1h
95h
Rev. 0.6 / Dec. 2006
Table 15: Read ID Data Table