HY27UH08AG5M Datasheet, PDF (21/49 Pages) Hynix Semiconductor – 16Gbit (2Gx8bit) NAND Flash

HY27UH08AG(5/D)M Series
16Gbit (2Gx8bit) NAND Flash
Parameter
Operating
Current
Sequential
Read
Program
Erase
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Level
Output Low Current (R/B)
Symbol
Test Conditions
Min
ICC1
tRC=30ns
CE=VIL, IOUT=0mA
-
ICC2
-
-
ICC3
-
-
ICC4
CE=VIH,
WP=0V/Vcc
-
ICC5
CE=Vcc-0.2,
WP=0V/Vcc
-
ILI
VIN=0 to Vcc ^{Single & 2CE}
-
(max)
Dual
-
ILO
VOUT =0 to Vcc ^{Single & 2CE}
-
(max)
Dual
-
VIH
-
Vccx0.8
VIL
-
-0.3
VOH
IOH=-400uA
2.4
VOL
IOL=2.1mA
-
IOL
(R/B)
VOL=0.4V
8
Table 8: DC and Operating Characteristics
3.3Volt
Typ
30
30
30
40
-
-
-
-
-
-
-
-
10
Unit
Max
45
mA
45
mA
45
mA
1.5 mA
200 uA
± 40 uA
± 20
± 40 uA
± 20
Vcc+0.3 V
Vccx0.2 V
-
V
0.4
V
-
mA
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (2.7V - 3.3V)
Output Load (3.0 - 3.6V)
Table 9: AC Conditions
Value
3.3Volt
0V to Vcc
5ns
Vcc/2
1 TTL GATE and CL=50pF
1 TTLGATE and CL=100pF
Rev. 0.6 / Dec. 2006