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HY29F040A Datasheet, PDF (4/40 Pages) Hynix Semiconductor – 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
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BUS OPERATION
Table 1. Bus Operations(1)
OPERATION
/CE /OE /WE A0 A1 A6 A9
I/O
Electronic ID Manufacturer Code(2)
Electronic ID Device Code(2)
Read(3)
Standby
LL
H
LL
L
VID
LL
H
HL
L
VID
LL
H
A0 A1 A6 A9
HX X
XX
XX
Code
Code
DOUT
High Z
Output Disable
LH H
XX
XX
High Z
Write
LH L
A0 A1 A6 A9
D (4)
IN
Enable Sector Protect
L
VID
L
XX
X
VID
X
Verify Sector Protect
LL
H
LH
L
VID
Code
Notes:
1. L = VIL, H = VIH, X = Don’t Care. See DC Characteristics for voltage levels.
2. Manufacturer and device codes may also be accessed via a command register sequence. Refer to Table 4.
3. /WE can be VIL if /CE is VIL, /OE at VIH initiates the write operations.
4. Refer to Table 4 for valid DIN during a write operation.
Table 2. Sector Protection Verify Electronic ID Codes
Type
A18 A17 A16 A6 A1 A0 Code DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0
HEX
Manufacture Code
X
X
X
VIL
VIL
VIL
ADH
1
0
1
01
1
0
1
HY29F040A
Device Code
X
X
XV
V
V
A4H 1
0
1
00
1
0
0
IL
IL
IH
Sector Protection
Sector Addresses VIL
VIH
VIL
01H(1)
0
0
0
00
0
0
1
Notes:
1. Outputs 01H at protected sector addresses, and output 00H at unprotected sector addresses.
4
HY29F040A
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