HY29F040A Datasheet, PDF (34/40 Pages) Hynix Semiconductor – 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

AC CHARACTERISTICS
Write / Erase / Program Operations
Alternate /CE Controlled Writes
Parameter
Symbols
JEDEC Standard Description
-55 -70 -90 -120 -150 Unit
t_AVAV
t_AVEL
t_ELAX
t_DVEH
t_EHDX
t_WC
t_AS
t_AH
t_DS
t_DH
t_OES
t_OEH
Write Cycle Time⁽¹⁾
Address Setup Time
Address Hold Time
Data Setup Time Min.
Data Hold Time
Output Enable Setup Time
Output
Read⁽¹⁾
Min. 55
70
90 120 150 ns
Min. 0
0
0
0
0
ns
Min. 40
45
45
50 50
ns
25 30
45
50
50 ns
Min. 0
0
0
0
0
ns
Min. 0
0
0
0
0
ns
Min. 0
0
0
0
0
ns
Enable
Hold Time
Toggle Bit and
/Data Polling⁽¹⁾
Min. 10
10 10
10 10 ns
t_GHEL
t_GHEL
Read Recover Time Before Write Min. 0
0
0
0
0
ns
t_WLEL
t_WS
/WE Setup Time
Min. 0
0
0
0
0
ns
t_EHWH
t_WH
/WE Hold Time
Min. 0
0
0
0
0
ns
t_ELEH
t_CP
/CE Pulse Width
Min. 30
35
45
50 50
ns
t_EHEL
t_CPH
/CE Pulse Width High
Min. 20
20
20
20 20
ns
t t _{WHWH1 WHWH1}
Byte Programming Operation
Typ. 7
7
7
7
7
ms
Max. 1.0 1.0 1.0 1.0 1.0 ms
t t _{WHWH2 WHWH2}
Sector Erase Operation⁽²⁾
Typ. 1
1
1
1
1 sec
Max. 15
15
15
15 15 sec
t t _{WHWH3 WHWH3}
Chip Erase Operation⁽²⁾
Typ. 8
8
8
8
8 sec
Max. 120 120 120 120 120 sec
t_VCS
t_VIDR
t_CESP
t_VLHT
t_WPP1
t_WPP2
t_CSP
V_CC Set Up Time⁽¹⁾
Min. 50
50
50
50 50
ms
Rise
Time
to
V (1,2)
ID
Min. 500 500 500 500 500 ns
/OE Setup Time to /WE Active^(1,2) Min. 4
4
4
4
4
ms
Voltage Transition Time^(1,2)
Min. 4
4
4
4
4
ms
Sector Protect Write Pulse Width⁽²⁾ Min. 100 100 100 100 100 ms
Sector Unprotect Write Pulse Width⁽²⁾ Min. 10
10
10
10 10 ms
/CE Setup Time to /WE Active^(1,2) Min. 4
4
4
4
4
ns
Notes:
1. Not 100% tested.
2. These timings are for Sector Protect and/or Sector Unprotect operations.
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HY29F040A