HY29F040A Datasheet, PDF (2/40 Pages) Hynix Semiconductor – 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

protect and sector unprotect features can be en-
abled in a PROM programmer.
The HY29F040A needs a single 5.0 volt power-
supply for read, program and erase operation. In-
ternally generated and well regulated voltages are
provided for program and erase operation. A low
Vcc detector inhibits write operations on loss of
power. End of program or erase is detected by /Data
Polling of DQ7 or by the Toggle Bit feature on DQ6.
Once program or erase cycle is successfully com-
pleted, the device internally resets to the Read
mode.
BLOCK DIAGRAM
Vcc
E rase V oltage
Vss
G en e rato r
State
C ontrol
WE
Com mand _{P GM V oltage}
R egister
G en e rato r
DQ 0-DQ7
In put /O utpu t
B uffers
CE
OE
Chip E nable
Output E nable
Log ic
STB
Data Latch
A 0-A18
V cc D etector
T im e r
STB
Y-D ecoder
A ddress
Latch _{X-D ecoder}
Y -Gating
Cell Matrix
2
HY29F040A