HY29F040A Datasheet, PDF (21/40 Pages) Hynix Semiconductor – 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

DC CHARACTERISTICS (continued)
CMOS Compatible
Parameter
Symbol _{Parameter Description}
I_LI
Input Load Current
I_LIT
A9 Input Load Current
I_LO
Output Leakage Current
I_CC1
Vcc Active Current⁽¹⁾
I_CC2
Vcc Active Current^(2,3)
I_CC3
Vcc Standby Current
V_IL
Input Low Level
V_IH
Input High Level
V_ID
Voltage for Electronic ID
and Sector Protect
Test Conditions
Min. Max. Unit
V_IN = Vss to Vcc, Vcc = Vcc Max.
±1.0
mA
Vcc = Vcc Max., A9 = V_ID
50
mA
V_OUT = Vss to Vcc, Vcc = Vcc Max.
±1.0
mA
/CE = V_IL, /OE = V_IH
40
mA
/CE = V_IL, /OE = V_IH
60
mA
Vcc = Vcc Max., /CE = Vcc ± 0.5V
5.0
mA
-0.5
0.8
V
0.7x
Vcc
Vcc
+ 0.3
V
Vcc = 5.0 V
11.5
12.5
V
V_OL
Output Low Voltage
V_OH1
Output High Voltage
I_OL = 12 mA, Vcc = Vcc Min.
I_OH = -2.5 mA, Vcc = Vcc Min.
0.45
V
0.85x
V
Vcc
V_OH2
I_OH = -100 mA, Vcc = Vcc Min.
Vcc
V
-0.4
V_LKO
Low Vcc Lock-out Voltage
3.2
4.2
V
Notes:
1. The Icc current listed includes both the DC operating current and the frequency dependent component (at 6 MHz).
The frequency component typically is less than 1 mA/MHz, with /OE at V_IH.
2. Icc active while Internal Algorithm (program or erase) is in progress.
3. Not 100% tested.
HY29F040A
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