HY29F040A Datasheet, PDF (36/40 Pages) Hynix Semiconductor – 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

ERASE AND PROGRAMMING PERFORMANCE
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time
Erase/Program Cycles
Min.
100,000
Limits
Typ.
1.0
8
7
7
1,000,000
Max.
15
120
1000
25
Unit
sec
sec
ms
sec
cycles
LATCH UP CHARACTERISTICS
Parameter
Input Voltage with respect to Vss on all I/O pins
Vcc Current
Min.
-1.0V
-100 mA
Notes:
1. Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time.
PDIP PIN CAPACITANCE
Parameter Symbol
Parameter Description
C_IN
C_OUT
C_IN2
Input Capacitance
Output Capacitance
Control Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 Mhz
Test Setup
V_IN = 0
V_OUT = 0
V_IN = 0
Typ.
4
8
8
PLCC PIN CAPACITANCE
Parameter Symbol
Parameter Description
C_IN
C_OUT
C_IN2
Input Capacitance
Output Capacitance
Control Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 Mhz
Test Setup
V_IN = 0
V_OUT = 0
V_IN = 0
Typ.
4
8
8
TSOP PIN CAPACITANCE
Parameter Symbol
Parameter Description
Test Setup
Typ.
C_IN
C_OUT
C_IN2
Input Capacitance
V_IN = 0
6
Output Capacitance
V_OUT = 0
8.5
Control Pin Capacitance
V_IN = 0
7.5
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Max.
Vcc + 1.0V
+ 100 mA
Max.
Unit
6
pF
12
pF
12
pF
Max.
Unit
6
pF
12
pF
12
pF
Max.
Unit
7.5
pF
12
pF
9
pF
36
HY29F040A