HY29F040A Datasheet, PDF (22/40 Pages) Hynix Semiconductor – 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

AC CHARACTERISTICS
Read Only Operations
Parameter Symbol
JEDEC Standard
t_AVAV
t_AVQV
t_RC
t_ACC
t_ELQV
t_CE
t_GLQV
t_OE
t_EHQZ
t_HZ
t_GHQZ
t_DF
t_AXQX
t_OH
Description
Read Cycle Time⁽³⁾
Address to
Output Delay
Chip Enable to
Output Delay
Output Enable to
Output Delay
Chip Enable to
Output High Z^(3,4)
Output Enable to
Output High Z^(3,4)
Output Hold Time
from Addresses,
/CE or /OE,
Whichever
Occurs First
Test Setup
/CE = V_IL
/OE = V_IL
/OE = V_IL
Min.
Max.
Max.
Max.
Max.
Min.
-55⁽¹⁾
-70⁽²⁾
-90⁽²⁾ -120⁽²⁾ - 150⁽²⁾ Unit
55
70
90
120 150
ns
55
70
90
120 150
ns
55
70
90
120 150
ns
25
30
35
50
55
ns
18
20
20
30
35
ns
18
20
20
30
35
ns
0
0
0
0
0
ns
Notes:
1. Test Conditions:
2. Test Conditions:
Output Load: 1 TTL gate and 30 pF
Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 5 ns
Input rise and fall times: 20 ns
Input pulse levels: 0.0 V to 3.0 V
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference level Timing measurement reference level
Input: 1.5 V
Input: 0.8 and 2.0 V
Output: 1.5 V
Output: 0.8 and 2.0 V
3. Output driver disable time.
4. Not 100% tested.
22
HY29F040A