HY29F040A Datasheet, PDF (20/40 Pages) Hynix Semiconductor – 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory

DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Symbol
I_LI
I_LIT
I_LO
I_CC1
I_CC2
I_CC3
V_IL
V_IH
Parameter Description
Input Load Current
A9 Input Load Current
Output Leakage Current
Vcc Active Current⁽¹⁾
Vcc Active Current^(2,3)
Vcc Standby Current
Input Low Level
Input High Level
Test Conditions
V_IN = Vss to Vcc, Vcc = Vcc Max.
Vcc = Vcc Max., A9 = V_ID
V_OUT = Vss to Vcc, Vcc = Vcc Max.
/CE = V_IL, /OE = V_IH
/CE = V_IL, /OE = V_IH
Vcc = Vcc Max., /CE = V_IH
Min.
-0.5
2.0
V_ID
Voltage for Electronic ID
and Sector Protect
Vcc = 5.0 V
11.5
V_OL
Output Low Voltage
I_OL = 12 mA, Vcc = Vcc Min.
V_OH
Output High Voltage
I_OH = -2.5 mA, Vcc = Vcc Min.
2.4
V_LKO
Low Vcc Lock-Out Voltage
3.2
Max.
±1.0
50
±1.0
40
60
1.0
0.8
Vcc
+ 0.5
12.5
0.45
4.2
Notes:
1. The Icc current listed includes both the DC operating current and the frequency dependent component
(at 6 MHz). The frequency component typically is less than 1 mA/MHz, with /OE at V_IH.
2. Icc active while Internal Algorithm (program or erase) is in progress.
3. Not 100% tested.
Unit
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
20
HY29F040A