HMT425S6MFR6A Datasheet, PDF (4/53 Pages) Hynix Semiconductor – DDR3L SDRAM Unbuffered SODIMMs Based on 4Gb M-die

Key Parameters
MT/s
Grade
DDR3L-1066
-G7
DDR3L-1333
-H9
DDR3L-1600
-PB
tCK
(ns)
1.875
1.5
1.25
CAS
Latency
(tCK)
tRCD
(ns)
tRP
(ns)
tRAS
(ns)
tRC
(ns)
CL-tRCD-tRP
7
13.125 13.125 37.5 50.625
7-7-7
9
13.5
13.5
(13.125)* (13.125)*
36
49.5
(49.125)*
9-9-9
11
13.75 13.75
(13.125)* (13.125)*
35
48.75
(48.125)*
11-11-11
*SK hynix DRAM devices support optional downbinning to CL11, CL9 and CL7. SPD setting is programmed
to match.
Speed Grade
Grade
-G7
-H9
-PB
CL5
CL6
667
800
667
800
667
800
Address Table
CL7
1066
1066
1066
Frequency [MHz]
CL8
1066
1066
1066
CL9
1333
1333
CL10
1333
1333
CL11
1600
CL12
Remark
Refresh Method
Row Address
Column Address
Bank Address
Page Size
2GB(1Rx16)
8K/64ms
A0-A14
A0-A9
BA0-BA2
2KB
4GB(1Rx8)
8K/64ms
A0-A15
A0-A9
BA0-BA2
1KB
8GB(2Rx8)
8K/64ms
A0-A15
A0-A9
BA0-BA2
1KB
Rev. 1.0 / Jul. 2012
4