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| HMT425S6MFR6A Datasheet, PDF (30/53 Pages) Hynix Semiconductor – DDR3L SDRAM Unbuffered SODIMMs Based on 4Gb M-die | |||
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Refresh parameters by device density
Refresh parameters by device density
Parameter
RTT_Nom Setting
512Mb 1Gb
2Gb
4Gb
8Gb Units
REF command ACT or
REF command time
tRFC
90
110
160
260
350
ns
Average periodic
refresh interval
tREFI
0 ï°C ï£ TCASE ï£ 85 ï°C
85 ï°C ï¼ TCASE ï£ 95 ï°C
7.8
3.9
7.8
3.9
7.8
3.9
7.8
3.9
7.8
us
3.9
us
Rev. 1.0 / Jul. 2012
30
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