HMT425S6MFR6A Datasheet, PDF (12/53 Pages) Hynix Semiconductor – DDR3L SDRAM Unbuffered SODIMMs Based on 4Gb M-die

Absolute Maximum Ratings
Absolute Maximum DC Ratings
Absolute Maximum DC Ratings
Symbol
Parameter
VDD _{Voltage on VDD pin relative to Vss}
VDDQ _{Voltage on VDDQ pin relative to Vss}
V_IN, V_{OUT Voltage on any pin relative to Vss}
T_{STG Storage Temperature}
Notes:
Rating
- 0.4 V ~ 1.80 V
- 0.4 V ~ 1.80 V
- 0.4 V ~ 1.80 V
-55 to +100
Units
V
V
V
o_C
Notes
1, 3
1, 3
1
1, 2
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than
0.6XVDDQ,When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.

DRAM Component Operating Temperature Range
Temperature Range
Symbol
T_OPER
Notes:
Parameter
Normal Operating Temperature Range
Extended Temperature Range
Rating
0 to 85
85 to 95
Units
o_C
o_C
Notes
1,2
1,3
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For mea-
surement conditions, please refer to the JEDEC document JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. Dur-
ing operation, the DRAM case temperature must be maintained between 0 - 85^oC under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85^oC and 95^oC
case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:
a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs. It
is also possible to specify a component with 1X refresh (tREFI to 7.8µs) in the Extended Temperature Range.
Please refer to the DIMM SPD for option availability
b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use
the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b)
or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7 = 0b). DDR3L SDRAMs support
Auto Self-Refresh and Extended Temperature Range and please refer to component datasheet and/or the
DIMM SPD for tREFI requirements in the Extended Temperature Range.
Rev. 1.0 / Jul. 2012
12