HMT312S6BFR6C-G7 Datasheet, PDF (4/54 Pages) Hynix Semiconductor – 204pin DDR3 SDRAM SODIMM

Key Parameters
MT/s
DDR3-1066
DDR3-1333
DDR3-1600
Grade
-G7
-H9
-PB
tCK
(ns)
1.875
1.5
1.25
CAS
Latency
(tCK)
tRCD
(ns)
7
13.125
9
13.5
11
13.75
tRP
(ns)
13.125
13.5
13.75
tRAS
(ns)
37.5
36
35
tRC
(ns)
50.625
49.5
48.75
CL-tRCD-tRP
7-7-7
9-9-9
11-11-11
Speed Grade
Grade
CL6
-G7
800
-H9
800
-PB
800
CL7
1066
1066
1066
Frequency [MHz]
CL8
1066
1066
1066
CL9
1333
1333
CL10
1333
1333
CL11
1600
Remark
Address Table
Refresh Method
Row Address
Column Address
Bank Address
Page Size
1GB(1Rx16)
8K/64ms
A0-A13
A0-A9
BA0-BA2
2KB
2GB(2Rx16)
8K/64ms
A0-A13
A0-A9
BA0-BA2
2KB
2GB(1Rx8)
8K/64ms
A0-A14
A0-A9
BA0-BA2
1KB
4GB(2Rx8)
8K/64ms
A0-A14
A0-A9
BA0-BA2
1KB
Rev. 0.2 / Feb. 2010
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