HMT312S6BFR6C-G7 Datasheet, PDF (3/54 Pages) Hynix Semiconductor – 204pin DDR3 SDRAM SODIMM

Description
Hynix Unbuffered DDR3 SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line
Memory Modules) are low power, high-speed operation memory modules that use Hynix DDR3 SDRAM
devices. These Unbuffered DDR3 SDRAM DIMMs are intended for use as main memory when installed in
systems such as mobile personal computers.
Features
• VDD=1.5V +/- 0.075V
• VDDQ=1.5V +/- 0.075V
• VDDSPD=3.0V to 3.6V
• Functionality and operations comply with the
DDR3 SDRAM datasheet
• 8 internal banks
• Data transfer rates: PC3-10600, PC3-8500, or
PC3-6400
• Bi-directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly: BL 8 or BC
(Burst Chop) 4
• On Die Termination (ODT) supported
• RoHS compliant
* This product is in compliance with the RoHS directive.
Ordering Information
Part Number
Density Organization
HMT312S6BFR6C-G7/H9/PB 1GB
HMT325S6BFR6C-G7/H9/PB 2GB
HMT325S6BFR8C-G7/H9/PB 2GB
HMT351S6BFR8C-G7/H9/PB 4GB
128Mx64
256Mx64
256Mx64
512Mx64
Component Composition
128Mx16(H5TQ2G63BFR)*4
128Mx16(H5TQ2G63BFR)*8
256Mx8(H5TQ2G83BFR)*8
256Mx8(H5TQ2G83BFR)*16
Rev. 0.2 / Feb. 2010
# of
ranks
1
2

2
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