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HMT312S6BFR6C-G7 Datasheet, PDF (30/54 Pages) Hynix Semiconductor – 204pin DDR3 SDRAM SODIMM | |||
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Standard Speed Bins
DDR3 SDRAM Standard Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
DDR3-800 Speed Bins
For specific Notes See âSpeed Bin Table Notesâ on page 34.
Speed Bin
CL - nRCD - nRP
Parameter
Internal read command to first data
Symbol
tAA
DDR3-800E
6-6-6
min
max
15
20
ACT to internal read or write delay time
tRCD
15
â
PRE command period
tRP
15
â
ACT to ACT or REF command period
tRC
52.5
â
ACT to PRE command period
CL = 5
CL = 6
CWL = 5
CWL = 5
Supported CL Settings
Supported CWL Settings
tRAS
tCK(AVG)
tCK(AVG)
37.5
9 * tREFI
Reserved
2.5
3.3
6
5
Unit Notes
ns
ns
ns
ns
ns
ns 1, 2, 3, 4
ns
1, 2, 3
nCK
nCK
Rev. 0.2 / Feb. 2010
30
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