HMT312S6BFR6C-G7 Datasheet, PDF (29/54 Pages) Hynix Semiconductor – 204pin DDR3 SDRAM SODIMM

Refresh parameters by device density
Refresh parameters by device density
Parameter
RTT_Nom Setting
512Mb 1Gb
2Gb
4Gb
8Gb Units
REF command ACT or
REF command time
tRFC
90
110
160
300
350 ns
Average periodic
refresh interval
tREFI
0 °C ≤ T_CASE ≤ 85 °C
85 °C < T_CASE ≤ 95 °C
7.8
3.9
7.8
3.9
7.8
3.9
7.8
3.9
7.8
us
3.9
us
Rev. 0.2 / Feb. 2010
29