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| HMT451V7MFR8C Datasheet, PDF (39/67 Pages) Hynix Semiconductor – DDR3 SDRAM VLP Registered DIMM Based on 4Gb M-die | |||
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Refresh parameters by device density
Refresh parameters by device density
Parameter
RTT_Nom Setting
512Mb 1Gb 2Gb 4Gb
REF command ACT or
REF command time
tRFC
90
110
160
260
Average periodic
refresh interval
tREFI
0 ï°C ï£ TCASE ï£ 85 ï°C
85 ï°C ï¼ TCASE ï£ 95 ï°C
7.8
3.9
7.8
3.9
7.8
3.9
7.8
3.9
8Gb Units Notes
350 ns
7.8 us
3.9 us 1
Rev. 1.0 / Aug. 2012
39
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