HY29F002T Datasheet, PDF (29/38 Pages) Hynix Semiconductor – 2 Megabit (256K x 8), 5 Volt-only, Flash Memory

AC CHARACTERISTICS
WE#
Enter
Automatic
Erase
DQ[6]
Erase
Suspend
Enter Erase
Suspend
Program
Erase
Erase
Suspend
Read
HY29F002T
Erase
Resume
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Erase
Complete
DQ[2]
Notes:
1. The system may use CE# or OE# to toggle DQ[2] and DQ[6]. DQ[2] toggles only when read at an address within an
erase-suspended sector.
Figure 19. DQ[2] and DQ[6] Operation
Sector Protect and Unprotect, Temporary Sector Unprotect
Parameter
JEDEC Std
Description
t_ST Voltage Setup Time
t_RSP
RESET# Setup Time for
Temporary Sector Group Unprotect
t_CE Chip Enable to Output Delay
t_OE Output Enable to Output Delay
t_VIDR
Voltage Transition Time for
Temporary Sector Group Unprotect (Note 1)
t_VLHT
Voltage Transition Time for
Sector Group Protect and Unprotect (Note 1)
t_WPP1
t_WPP2
t_OESP
t_CSP
Write Pulse Width for Sector Group Protect
Write Pulse Width for Sector Group Unprotect
OE# Setup Time to WE# Active (Note 1)
CE# Setup Time to WE# Active (Note 1)
Notes:
1. Not 100% tested.
Speed Option
Unit
- 45 - 55 - 70 - 90
Min
50
µs
Min
4
µs
Max 45 55 70 90 ns
Max 25 25 30 35 ns
Min
500
ns
Min
4
µs
Min
100
µs
Min
100
ms
Min
4
µs
Min
4
µs
Rev. 4.1/May 01
29