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HY29F002T Datasheet, PDF (25/38 Pages) Hynix Semiconductor – 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
AC CHARACTERISTICS
HY29F002T
Program and Erase Operations
Parameter
JEDEC Std
Description
Speed Option
Unit
- 45 - 55 - 70 - 90
tAVAV
tAVWL
tWLAX
tDVWH
tWHDX
tGHWL
tELWL
tWHEH
tWLWH
tWHWL
tWHWH1
tWC
tAS
tAH
tDS
tDH
tGHWL
tCS
tCH
tWP
tWPH
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
tWHWH1 Byte Programming Operation (Notes 1, 2, 3)
Min 45 55 70 90 ns
Min
0
ns
Min 40 45 45 45 ns
Min 25 25 30 45 ns
Min
0
ns
Min
0
ns
Min
0
ns
Min
0
ns
Min 30 30 35 45 ns
Min
20
ns
Typ
7
µs
Max
300
µs
Typ
1.8
sec
Chip Programming Operation (Notes 1, 2, 3, 5)
Max
5.4
sec
tWHWH2 tWHWH2 Sector Erase Operation (Notes 1, 2, 4)
Typ
1
sec
Max
8
sec
tWHWH3 tWHWH3 Chip Erase Operation (Notes 1, 2, 4)
Typ
7
sec
Max
55
sec
Erase and Program Cycle Endurance
Typ
1,000,000
cycles
Min
100,000
cycles
tVCS VCC Setup Time
Min
50
µs
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25 °C, VCC = 5.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90 °C, VCC = 4.5 volts (4.75 volts for 45 ns version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 5 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes
are programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
bytes program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum
byte program time specified is exceeded. See Write Operation Status section for additional information.
Rev. 4.1/May 01
25