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HY29F080 Datasheet, PDF (27/38 Pages) Hynix Semiconductor – 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
AC CHARACTERISTICS
HY29F080
Addresses
CE#
OE#
WE#
Data
RY/BY#
Erase Command Sequence (last two cycles)
Read Status Data (last two cycles)
tWC
0x2AA
tAS
tAH
SA
0x555 for chip erase
tGHWL
tCH
tWP
tCS
0x55
tDS
tWPH
tDH
0x30
tBUSY
0x10 for
chip erase
VA
tWHWH2 or tWHWH3
Status
VA
DOUT
tRB
VCC
tVCS
Notes:
1. SA =Sector Address (for sector erase), VA = Valid Address for reading status data (see Write Operation Status section),
DOUT is the true data at the read address.(0xFF after an erase operation).
2. VCC shown only to illustrate tVCS measurement references. It cannot occur as shown during a valid command sequence.
Figure 16. Sector/Chip Erase Operation Timings
Rev. 6.1/May 01
27