HY29F080 Datasheet, PDF (20/38 Pages) Hynix Semiconductor – 8 Megabit (1M x 8), 5 Volt-only, Flash Memory

HY29F080
DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Description
Test Setup
Min
Typ
Max Unit
I_LI
Input Load Current
I_LIT
A[9] Input Load Current
V_IN = V_SS to V_CC,
V_CC = V_CC Max
V_CC = V_CC Max,
A[9] = 12.5 V
±1.0
µA
50
µA
I_LO
Output Leakage Current
V_OUT = V_SS to V_CC,
V_CC = V_CC Max
I_CC1
V_CC Active Read Current ¹
CE# = V_IL, OE# = V_IH
I_CC2
V_CC Active Write Current ^{2, 3}
CE# = V_IL, OE# = V_IH
I_CC3
V_CC CE# Controlled
TTL Standby Current
V_CC = V_CC Max,
CE# = RESET# = V_IH
I_CC4
V_CC RESET# Controlled
TTL Standby Current
V_CC = V_CC Max,
RESET# = V_IL
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_ID
Voltage for Electronic ID and
Temporary Sector Unprotect
V_CC = 5.0V
-0.5
2.0
11.5
±1.0
µA
25
40
mA
40
60
mA
0.4
1.0
mA
0.4
1.0
mA
0.8
V
V_CC + 0.5 V
12.5
V
V_OL
Output Low Voltage
V_CC = V_CC Min,
I_OL = 12.0ma
0.45
V
V_OH
Output High Voltage
V_CC = V_CC Min,
I_OH = -2.5 mA
2.4
V
V_LKO
Low V_CC Lockout Voltage ³
3.2
4.2
V
Notes:
1. Includes both the DC Operating Current and the frequency dependent component at 6 MHz. The read component of the
I_CC current is typically less than 1 ma/MHz with OE# at V_IL.
2. I active while Automatic Erase or Automatic Program algorithm is in progress.
CC
3. Not 100% tested.
20
Rev. 6.1/May 01