HY29F080 Datasheet, PDF (22/38 Pages) Hynix Semiconductor – 8 Megabit (1M x 8), 5 Volt-only, Flash Memory

HY29F080
TEST CONDITIONS
+ 5V
DEVICE
UNDER
TEST
C_L
6.2
KOhm
2.7
KOhm
All diodes
are
1N3064
or
equivalent
Figure 11. Test Setup
Table 7. Test Specifications
Test
Condition
- 70
- 90
Unit
- 12
Output Load
1 TTL Gate
Output Load Capacitance (C_L)
100
pF
Input Rise and Fall Times
20
ns
Input Signal Low Level
0.45
V
Input Signal High Level
2.4
V
Low Timing Measurement
Signal Level
High Timing Measurement
Signal Level
0.8
V
2.0
V
2.4 V
0.45 V
Input
2.0 V
0.8 V
Measurement
Levels
2.0 V
0.8 V
HY29F080-70, -90, -12 Versions
Figure 12. Input Waveforms and Measurement Levels
Output
22
Rev. 6.1/May 01