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GMS82524 Datasheet, PDF (13/93 Pages) Hynix Semiconductor – 8-BIT SINGLE-CHIP MICROCONTROLLERS
GMS82512/16/24
HYUNDAI MicroElectronics
7. ELECTRICAL CHARACTERISTICS
7.1 Absolute Maximum Ratings
Supply voltage ............................................. -0.3 to +7.0 V
Storage Temperature .................................. -40 to +125 °C
Voltage on any pin with respect to Ground (VSS)
..................................................................-0.3 to VDD+0.3
Maximum current out of VSS pin .......................... 150 mA
Maximum current into VDD pin .............................. 80 mA
Maximum current sunk by (IOL per I/O Pin) .......... 20 mA
Maximum output current sourced by (IOH per I/O Pin)
................................................................................... 8 mA
7.2 Recommended Operating Conditions
Maximum current (ΣIOL) ...................................... 100 mA
Maximum current (ΣIOH)........................................ 50 mA
Note: Stresses above those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the de-
vice. This is a stress rating only and functional operation of
the device at any other conditions above those indicated in
the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for ex-
tended periods may affect device reliability.
Parameter
Supply Voltage
Operating Frequency
Operating Temperature
Symbol
Condition
VDD
fXIN
TOPR
fXIN=1 ~ 10 MHz
fXIN=1 ~ 8 MHz
fXIN=1 ~ 4 MHz
VDD=4.5~5.5V
VDD=2.7~5.5V
VDD=2.2~5.5V
Normal Version
Temperature Extention Version
Specifications
Min.
Max.
4.5
5.5
2.7
5.5
2.2
5.5
1
10
1
8
1
4
-20
85
-40
85
7.3 A/D Converter Characteristics
(TA=25°C, VSS=0V, VDD=5.12V@fXIN=8MHz, VDD=3.072V@fXIN=4MHz)
Parameter
Analog Input Voltage Range
Non-linearity Error
Differential Non-linearity Error
Zero Offset Error
Full Scale Error
Gain Error
Overall Accuracy
AVDD Input Current
Conversion Time
Symbol
VAIN
NNLE
NDNLE
NZOE
NFSE
NGE
NACC
IREF
TCONV
Min.
VSS
-
-
-
-
-
-
-
-
Specifications
Typ.1
Max.
fXIN=4MHz fXIN=8MHz
-
AVDD
AVDD
±1.0
±1.5
±1.5
±1.0
±1.5
±1.5
±0.5
±1.5
±1.5
±0.35
±0.5
±0.5
±1.0
±1.5
±1.5
±1.0
±1.5
±1.5
0.5
1.0
1.0
-
40
20
Unit
V
MHz
°C
Unit
V
LSB
LSB
LSB
LSB
LSB
LSB
mA
µs
10
FEB. 2000 Ver 1.00