HAF2015RJ Datasheet, PDF (8/10 Pages) Hitachi Semiconductor – SILICON N CHANNEL MOS FET SERIES POWER SWITCHING

HAF2015RJ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
0.1
0.01
0.001
D=1
0.5
0.2
0.1
0.05
0.02
0.01
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θ _{ch-f(t) =} γ _{s (t)} • θ_{ch - f}
θ_{ch-f = 125°C/W, Ta = 25°C}
When using the glass epoxy board
(FR4 40 × 40 × 1.6mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θ_{ch-f(t) =} γ_{s (t)} • θ_{ch - f}
θ_{ch-f = 166 °C/W, Ta = 25°C}
When using the glass epoxy board
(FR4 40 × 40 × 1.6mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
8