HAF2015RJ Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – SILICON N CHANNEL MOS FET SERIES POWER SWITCHING

Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.25
Pulse Test
0.2
0.15
I _D= 1 A
0.1
0.5 A
0.05
0.2 A
0
2
4
6
8 10
Gate to Source Voltage V_GS (V)
HAF2015RJ
Static Drain to Source Sate Resistance
vs. Drain Current
500
200
V_GS = 5 V
100
V _GS = 10 V
50
20
Pulse Test
10
0.1 0.2 0.5 1 2 5
Drain Current I _D (A)
10 20
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
I D = 1 A ^{0.5 A, 0.2 A}
0.2
0.15
V_GS = 5 V
ID=1A
0.5 A, 0.2 A
0.1
0.05
V_GS = 10 V
0
-40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
V _DS = 10 V
5 Pulse Test
Tc = -25°C
2
1
75°C
0.5
25°C
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I _D (A)
5