HAF2015RJ Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – SILICON N CHANNEL MOS FET SERIES POWER SWITCHING

HAF2015RJ
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V_DSS
60
V
Gate to source voltage
V_GSS
16
V
Gate to source voltage
V_GSS
–2.5
V
Drain current
I_D
2
A
Drain peak current
I Note1
D(pulse)
4
A
Body-drain diode reverse drain current I_DR
2
A
Avalanche current
I Note4
AP
0.54
A
Avalanche energy
E Note4
AR
25
mJ
Channel dissipation
Pch ^Note2
2
W
Channel dissipation
Pch ^Note3
1.5
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6mm), PW ≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 × 40 × 1.6mm), PW ≤ 10s
4. Tch = 25°C , Rg > 50 Ω
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Hysteresis temperature
Gate operation voltage
Symbol
V_IH
V_IL
I _IH1
I _IH2
I _IL
I _IH(sd)1
I _IH(sd)2
T_sd
Thr
V_op
Min
3.5
—
—
—
—
—
—
—
—
3.5
Typ
—
—
—
—
—
0.53
0.2
175
120
—
Max
—
1.2
100
50
1
—
—
—
—
12
Unit
V
V
µA
µA
µA
mA
mA
°C
°C
V
Test Conditions
Vi = 5V, V_DS = 0
Vi = 3.5V, V_DS = 0
Vi = 1.2V, V_DS = 0
Vi = 8V, V_DS = 0
Vi = 3.5V, V_DS = 0
Channel temperature
Channel temperature
2