HAF2015RJ Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – SILICON N CHANNEL MOS FET SERIES POWER SWITCHING

HAF2015RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test Congition:
When using the glass epoxy board
3.0 _{(FR4 40 × 40 × 1.6mm), PW < 10 s}
2.0
1.0
1 _{Drive O2pDerraivteioOn} ^peration
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
50
Thermal shut down
20 Operation area
10
100 _µs
5
2
1 _ms
PW
1
0.5
= _{10 ms}
Operation in this area
0.2 ^{is limited by R DS(on)}
0.1 ^{Ta = 25°C}
0.05 ^{1 shot Pulse}
PWD_<^C _1O0pseration
1 Drive Operation
0.03 _{0.5 1 2 5 10 20}
50 100
Drain to Source Voltage V_DS (V)
Note7:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Output Characteristics
5
Pulse Test
10 V
4
8V
6V
5V
3
4V
2
V_GS = 3.5 V
1
0
2
4
6
8 10
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
2.5
V _DS = 10 V
Pulse Test
2
Tc = -25°C
25°C
1.5
75°C
1
0.5
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
4