HAF2015RJ Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – SILICON N CHANNEL MOS FET SERIES POWER SWITCHING

HAF2015RJ
Silicon N Channel MOS FET Series
Power Switching
ADE-208-933 (Z)
1st. Edition
Dec. 2000
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the
built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate
voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (5 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Temperature hysteresis type.
• High density mounting.
Outline
SOP-8
DD
78
2
G
Gate resistor
Tmperature ^self
sencing
return
circuit
circuit
Gate
shutdown
circuit
MOS1
1
S
DD
56
8 ^{7 65}
1 ²³⁴
4
G
Gate resistor
Tmperature
sencing
circuit
self
return
circuit
Gate
shutdown
circuit
MOS2
3
S
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain