HAF2015RJ Datasheet, PDF (7/10 Pages) Hitachi Semiconductor – SILICON N CHANNEL MOS FET SERIES POWER SWITCHING

Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
12
10
V DD= 16 V
8
6
4
2
0
0.0001 0.001 0.01
0.1
1
Shutdown Time of Load-Short Test
Pw (S)
HAF2015RJ
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
I _D = 0.2 A
100
0
2
4
6
8
10
Gate to Source Voltage V _GS (V)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
5V
50W
VDD
= 30 V
Waveform
Vin ^10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
t_f
7