HAF2015RJ Datasheet, PDF (6/10 Pages) Hitachi Semiconductor – SILICON N CHANNEL MOS FET SERIES POWER SWITCHING

HAF2015RJ
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20 di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
10
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
Reverse Drain Current I _DR (A)
Switching Characteristics
100
V_GS = 5 V, V _DD ^•=_• 30 V
50 ^{PW = 300 µs, duty ≤ 1 %}
20
tr
10
5
t _{d (on)}
2
1
tf
t _{d (off)}
0.5
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
Drain Current I _D (A)
Reverse Drain Current vs.
Souece to Drain Voltage
5
V_GS = 5 V
Pulse Test
4
3
0V
2
1
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V _SD(V)
1000
Typical Capacitance vs.
Drain to Source Voltage
100
VGS = 0
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
6