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HAF2015RJ Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – SILICON N CHANNEL MOS FET SERIES POWER SWITCHING
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HAF2015RJ
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain current
Drain current
Drain to source breakdown
voltage
I D1
I D2
V(BR)DSS
Gate to source breakdown
voltage
V(BR)GSS
Gate to source breakdown
voltage
V(BR)GSS
Gate to source leak current
Input current (shut down)
Zero gate voltege drain current
Zero gate voltege drain current
I GSS1
I GSS2
I GSS3
I GSS4
I GS(op)1
I GS(op)2
I DSS1
I DSS2
Min
0.7
—
60
16
–2.5
—
—
—
—
—
—
—
—
Gate to source cutoff voltage VGS(off)
1.4
Static drain to source on state RDS(on)
—
resistance
Static drain to source on state RDS(on)
—
resistance
Forward transfer admittance |yfs|
0.5
Output capacitance
Coss
—
Typ
—
—
—
—
—
—
—
—
—
0.53
0.2
—
—
—
130
110
2.5
139
Max Unit
—
A
10
mA
—
V
—
V
—
V
100
µA
50
µA
1
µA
–100 µA
—
mA
—
mA
10
µA
10
mA
2. 5
V
200
mΩ
160
mΩ
—
S
—
pF
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body–drain diode forward
VDF
voltage
Body–drain diode reverse
t rr
recovery time
Over load shut down
t os1
operation timeNote6
—
4.2
—
µs
—
20
—
µs
—
1
—
µs
—
1
—
µs
—
0.82 —
V
—
55
—
ns
—
15
—
ms
Note: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition
Test Conditions
VGS = 3.5 V, VDS = 2 V
VGS = 1.2 V, VDS = 2 V
ID = 10 mA, VGS = 0
IG = 300 µA, VDS = 0
IG = –100 µA, VDS = 0
VGS = 5 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 60 V, VGS = 0
VDS = 48 V, VGS = 0
Ta = 125°C
ID = 1 mA, VDS = 10V
ID = 1 A, VGS = 5 V Note5
ID = 1 A, VGS = 10 V Note5
ID = 1 A, VDS = 10 V Note5
VDS = 10V , VGS = 0
f = 1 MHz
ID = 1 A, VGS = 5 V
RL = 30 Ω
IF = 2A, VGS = 0
IF = 2A, VGS = 0
diF/ dt = 50 A/µs
VGS = 5 V, VDD = 16 V
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