MB85R1002_07 Datasheet, PDF (9/15 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 1 M Bit (64 K × 16)

MB85R1002
(2) Write Operation
Parameter
Write Cycle Time
CE1 Active Time
CE2 Active Time
LB, UB Active Time
Pre-Charge Time
Address Setup Time
Address Hold Time
LB, UB Setup Time
Write Pulse Width
Data Setup Time
Data Hold Time
Write Setup Time
(3) Power ON/OFF Sequence
Parameter
CE1 LEVEL hold time for Power OFF
CE1 LEVEL hold time for Power ON
Symbol
tWC
tCA1
tCA2
tBP
tPC
tAS
tAH
tBS
tWP
tDS
tDH
tWS
(within recommended operating conditions)
Value
Unit
Min
Max
150
⎯
ns
120
⎯
ns
120
⎯
ns
120
⎯
ns
20
⎯
ns
0
⎯
ns
50
⎯
ns
5
⎯
ns
120
⎯
ns
0
⎯
ns
50
⎯
ns
0
⎯
ns
Sym-
bol
tpd
tpu
(within recommended operating conditions)
Value
Min
Typ
Unit
Max
85
⎯
⎯
ns
85
⎯
⎯
ns
3. Pin Capacitance
Parameter
Input Capacitance
Output Capacitance
Symbol Test Condition
Min
CIN
VIN = GND
⎯
COUT
VOUT = GND
⎯
Value
Typ
⎯
⎯
(f = 1 MHz, TA = +25 ^oC)
Unit
Max
10
pF
10
pF
9