MB85R1002_07 Datasheet, PDF (12/15 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 1 M Bit (64 K × 16)

MB85R1002
■ POWER ON/OFF SEQUENCE
tpd
VCC
CE2
3.0 V
VIH (Min)
tpu
VCC
CE2
3.0 V
VIH (Min)
1.0 V
VIL (Max)
1.0 V
VIL (Max)
GND
CE2 ≤ 0.2 V
CE1 > VCC × 0.8*
CE1 : Don't Care
CE1 > VCC × 0.8*
GND
CE1
CE1
* : CE1 (Max) < VCC + 0.5 V
Note : You can choose either of CE1 or CE2, or both for disenable control of the device.
■ NOTES ON USE
Data that is written prior to IR reflow is not guaranteed to be retained after IR reflow.
■ ORDERING INFOMATION
Part number
MB85R1002PFTN-GE1
MB85R1002BGT-GE1
Package
48-pin plastic TSOP(1)
(FPT-48P-M25)
48-pin plastic FBGA
(BGA-48P-M23)
12