MB85R1002_07 Datasheet, PDF (7/15 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 1 M Bit (64 K × 16)

MB85R1002
■ ELECTRICAL CHARACTERISTICS
1. DC CHARACTERISTICS
Parameter
Symbol
(within recommended operating conditions)
Test Conditions
Value
Unit
Min Typ Max
Input Leakage Current
|ILI| VIN = 0 V to VCC
⎯
⎯ 10 µA
Output Leakage Current |ILO| VOUT = 0 V to VCC, CE1 = VIH or OE = VIH
⎯
⎯ 10 µA
Operating Power Supply
Current
ICC
CE1 = 0.2 V, CE2 = VCC−0.2 V, Iout = 0 mA*¹
⎯
10 15 mA
CE1 ≥ VCC−0.2 V
Standby Current
CE2 ≤ 0.2 V*²
ISB
OE ≥ VCC−0.2 V, WE ≥ VCC−0.2 V*²
⎯
10 50 µA
LB ≥ VCC−0.2 V, UB ≥ VCC−0.2 V*²
Output Voltage (high)
VOH IOH = −0.1 mA
VCC × 0.8 ⎯ ⎯ V
Output Voltage (low)
VOL IOL = 2.0 mA
⎯
⎯ 0.4 V
*1 : During the measurement of ICC , the Address, Data In were taken to only change once per active cycle.
Iout : output current
*2 : All pins other than setting pins should be input at the CMOS level voltages such as H ≥ VCC − 0.2 V, L ≤ 0.2 V.
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