MB85R1002_07 Datasheet, PDF (8/15 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 1 M Bit (64 K × 16)

MB85R1002
2. AC TEST CONDITIONS
Supply Voltage : 3.0 V to 3.6 V
Operating Temperature : −20 ^oC to +85 ^oC
Input Voltage Amplitude : 0.3 V to 2.7 V
Input Rising Time : 5 ns
Input Falling Time : 5 ns
Input Evaluation Level : 2.0 V / 0.8 V
Output Evaluation Level : 2.0 V / 0.8 V
Output Impedance : 50 pF
(1) Read Operation
Parameter
Read Cycle time
CE1 Active Time
CE2 Active Time
OE Active Time
LB, UB Active Time
Pre-charge Time
Address Setup Time
Address Hold Time
OE Setup Time
LB, UB Setup Time
Output Data Hold time
Output Set Time
CE1 Access Time
CE2 Access Time
OE Access Time
Output Floating Time
(within recommended operating conditions)
Value
Symbol
Unit
Min
Max
tRC
150
⎯
ns
tCA1
120
⎯
ns
tCA2
120
⎯
ns
tRP
120
⎯
ns
tBP
120
⎯
ns
tPC
20
⎯
ns
tAS
0
⎯
ns
tAH
50
⎯
ns
tES
0
⎯
ns
tBS
5
⎯
ns
tOH
0
⎯
ns
tLZ
30
⎯
ns
tCE1
⎯
100
ns
tCE2
⎯
100
ns
tOE
⎯
100
ns
tOHZ
⎯
20
ns
8