MB85R1002_07 Datasheet, PDF (1/15 Pages) Fujitsu Component Limited. – Memory FRAM CMOS 1 M Bit (64 K × 16)

FUJITSU SEMICONDUCTOR
DATA SHEET
Memory FRAM
CMOS
1 M Bit (64 K × 16)
DS05-13104-3E
MB85R1002
■ DESCRIPTIONS
The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits
of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R1002 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R1002 can be used for at least 10¹⁰ read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E²PROM.
The MB85R1002 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
■ FEATURES
• Bit configuration
: 65,536 words × 16 bits
• Read/write endurance
: 10¹⁰ times/bit (Min)
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating temperature range : − 20 °C to +85 °C
• Data retention
: 10 years (+55 °C)
• LB and UB data byte control
• Package
: 48-pin plastic TSOP (1)
: 48-pin plastic FBGA
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