MB84VD2218XEG Datasheet, PDF (9/63 Pages) Fujitsu Component Limited. – 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

MB84VD2218XEG/EH/2219XEG/EH-90
Table 1. 2 User Bus Operations (Flash=Word mode; CIOf=Vccf, SRAM=Byte mode; CIOs=Vss)
Operation (1), (3)
CEf CE1s CE2s
OE
WE
SA
LBs
(6)
UBs
(6)
DQ0 to DQ7
DQ8 to DQ15
RESET
WP/
ACC
(5)
Full Standby
H
H
X
X
X X X X X HIGH-Z
L
HIGH-Z
H
X
Output Disable
HL
H
L
X
H H X X X HIGH-Z
H
X X X X X HIGH-Z
X
H H X X X HIGH-Z
L
HIGH-Z
HIGH-Z
HIGH-Z
H
X
Read from Flash
(2)
L
H
X
X
LHXX X
L
DOUT
DOUT
H
X
Write to Flash
HX
L
HLXXX
DIN
XL
DIN
H
X
Read from SRAM H L H L H SA X X
DOUT
HIGH-Z
H
X
Write to SRAM
H L H X L SA X X
DIN
HIGH-Z
H
X
Temporary Sector
Group
X X X XXXXX
X
Unprotection(4)
X
VID
X
Flash Hardware
Reset
H
X
X
X
X X X X X HIGH-Z
L
HIGH-Z
L
X
Boot Block Sector
Write Protection
X
X
X XXXXX
X
X
X
L
Legend: L = VIL, H = VIH, X = VIL or VIH. See DC Characteristics for voltage levels.
Notes:
1. Other operations except for indicated this column are inhibited.
2. WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
3. Do not apply CEf = VIL, CE1s = VIL and CE2s = VIH at a time.
4. It is also used for the extended sector group protections.
5. WP/ACC = VIL; protection of boot sectors.
WP/ACC = VIH; removal of boot sectors protection.
WP/ACC = VACC (9V) ; Program time will reduce by 40%.
6. LBS , UBS; Don’t care or Open.
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