MB84VD2218XEG Datasheet, PDF (38/63 Pages) Fujitsu Component Limited. – 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

MB84VD2218XEG/EH/2219XEG/EH-90
• Read Only Operations Characteristics (Flash)
Parameter
Symbols
JEDEC Standard
Description
tAVAV
tRC Read Cycle Time
tAVQV
tACC Address to Output Delay
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
—
tCEf
tOE
tDF
tDF
tOH
tREADY
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Output Hold Time From Addresses,
CEf or OE, Whichever Occurs First
RESET Pin Low to Read Mode
Note: Test Conditions–Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level
Input: 1.5 V
Output: 1.5 V
Test
Setup
—
CEf = VIL
OE = VIL
OE = VIL
—
—
—
—
—
-90
(Note)
Unit
Min. Max.
90
—
ns
—
90
ns
—
90
ns
—
40
ns
—
30
ns
—
30
ns
0
—
ns
—
20
µs
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