MB84VD2218XEG Datasheet, PDF (59/63 Pages) Fujitsu Component Limited. – 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

MB84VD2218XEG/EH/2219XEG/EH-90
s ERASE AND PROGRAMMING PERFORMANCE (Flash)
Parameter
Sector Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
Erase/Program Cycle
Min.
—
Limits
Typ.
1
—
8
—
16
—
—
100,000
—
Max.
10
300
360
100
—
Unit
Comment
s
µs
µs
s
cycle
Excludes programming time
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
Excludes system-level
overhead
s DATA RETENTION CHARACTERISTICS (SRAM)
Parameter
Symbol
Parameter Description
Min. Typ. Max. Unit
VDH Data Retention Supply Voltage
IDDS2 Standby Current
1.5
—
3.3
V
VDH = 3.0 V —
1.5
12*
µA
tCDR Chip Deselect to Data Retention Mode Time
tR
Recovery Time
0
—
—
ns
tRC
—
—
ns
Note: tRC: Read cycle time
*: TA=70°C
• CE1s Controlled Data Retention Mode (Note 1)
VCCs
2.7 V
DATA RETENTION MODE
VIH
VDH
CE1s
GND
See Note 2
tCDR
VCCS –0.2 V
See Note 2
tR
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