MB84VD2218XEG Datasheet, PDF (41/63 Pages) Fujitsu Component Limited. – 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

MB84VD2218XEG/EH/2219XEG/EH-90
(Continued)
Parameter Symbols
JEDEC Standard
Description
—
tVCS
VCCf Setup Time
—
tVLHT Voltage Transition Time (Note 2)
—
tVIDR
Rise Time to VID (Note 2)
—
tVACCR
Rise Time to VACC
—
tRB
Recover Time from RY/BY
—
tRP
RESET Pulse Width
—
tEOE
Delay Time from Embedded Output Enable
—
tRH
RESET High Level Period Before Read
—
tBUSY Program/Erase Valid to RY/BY Delay
—
tTOW
Erase Time-out Time (Note 3)
—
tSPD
Erase Suspend Transition Time (Note 4)
Min.
50
4
500
500
0
500
—
200
—
50
—
-90
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
—
—
—
—
—
—
90
—
90
—
20
Unit
µs
µs
ns
ns
ns
ns
ns
ns
ns
µs
µs
Notes: 1. This does not include the preprogramming time.
2. This timing is for Sector Protection Operation.
3. The time between writes must be less than “tTOW” otherwise that command will not be accepted and
erasure will start. A time-out or “tTOW” from the rising edge of last CE or WE whichever happens first will
initiate the execution of the Sector Erase command(s).
4. When the Erase Suspend command is written during the Sector Erase operation, the device will take a
maximum of “tSPD” to suspend the erase operation.
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