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MB84VD2218XEG Datasheet, PDF (54/63 Pages) Fujitsu Component Limited. – 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
MB84VD2218XEG/EH/2219XEG/EH-90
• Write Cycle (SRAM)
Parameter
Symbol
Parameter Description
tWC
Write Cycle Time
tWP
Write Pulse Width
tCW
Chip Enable to End of Write
tAW
Address valid to End of Write
tBW
UB, LB to End of Write
tAS
Address Setup Time
tWR
Write Recovery Time
tODW WE Low to Output High-Z
tOEW WE High to Output Active
tDS
Data Setup Time
tDH
Data Hold Time
Min.
85
60
70
70
70
0
0
—
0
35
0
Max.
Unit
—
ns
—
ns
—
ns
—
ns
—
ns
—
ns
—
ns
35
ns
—
ns
—
ns
—
ns
54