MB84VD2218XEG Datasheet, PDF (36/63 Pages) Fujitsu Component Limited. – 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

MB84VD2218XEG/EH/2219XEG/EH-90
(Continued)
Parameter _{Parameter Description}
Symbol
VIL Input Low Level
Test Conditions
—
Min.
–0.3
Typ.
—
Max. Unit
0.5 V
VIH Input High Level
—
2.4
— VCC+0.3* V
Voltage for Sector
VID
Protection, and Temporary
Sector Unprotection
—
(RESET) (Note 4)
11.5 — 12.5 V
Voltage for Program
VACC Acceleration (WP/ACC)
(Note4)
—
8.5
9.0
9.5 V
VOL
Output Low Voltage Level
VCCf = VCCf Min., VCCs = VCCs Min.,
IOL=1.0 mA
—
—
0.4 V
VOH
Output High Voltage Level
VCCf = VCCf Min., VCCs = VCCs Min.,
IOH=-0.5 mA
2.4
—
—V
VLKO
Flash Low VCCf Lock-Out
Voltage
—
2.3
—
2.5 V
*:VCC indicates lower of VCCf or VCCs.
Notes: 1. The ICC current listed includes both the DC operating current and the frequency dependent component.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. Automatic sleep mode enables the low power mode when address remain stable for 150 ns.
4. Applicable for only VCCf applying.
5. Embedded Alogorithm (program or erase) is in progress. (@5 MHz)
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