MB84VD2218XEG Datasheet, PDF (10/63 Pages) Fujitsu Component Limited. – 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

MB84VD2218XEG/EH/2219XEG/EH-90
Table 1. 3 User Bus Operations (Flash=Byte mode; CIOf=Vss, SRAM=Byte mode; CIOs=Vss)
Operation (1), (3)
CEf
CE1s
CE2s
DQ15/A–1
OE
WE
SA
LBs
(6)
UBs
(6)
DQ0 to
DQ7
Full Standby
HX
H
XL
X
X X X X X HIGH-Z
HL H
Output Disable
HX
L
XL
X
H H X X X HIGH-Z
X
X X X X X HIGH-Z
A–1 H H X X X HIGH-Z
Read from Flash
(2)
L
H
X
X
L
A–1
LHX X X
DOUT
Write to Flash
HX
L
XL
Read from SRAM H L H
Write to SRAM H L H
Temporary Sector
Group
XX X
Unprotection(4)
A–1
HLX X X
DIN
X
L H SA X X
DOUT
X
X L SA X X
DIN
X
XXX X X
X
Flash Hardware
Reset
X
H
X
X
L
X
X X X X X HIGH-Z
Boot Block Sector
Write Protection
X
X
X
X
XXX X X
X
Legend: L = VIL, H = VIH, X = VIL or VIH. See DC Characteristics for voltage levels.
Notes:
1. Other operations except for indicated this column are inhibited.
2. WE can be VIL if OE is VIL, OE at VIH initiates the write operations.
3. Do not apply CEf = VIL, CE1s = VIL and CE2s = VIH at a time.
4. It is also used for the extended sector group protections.
5. WP/ACC = VIL; protection of boot sectors.
WP/ACC = VIH; removal of boot sectors protection.
WP/ACC = VACC (9V) ; Program time will reduce by 40%.
6. LBS, UBS; Don’t care or Open.
DQ8 to
DQ14
WP/
RESET ACC
(5)
HIGH-Z H
X
HIGH-Z
HIGH-Z
H
X
HIGH-Z
X
H
X
X
H
X
HIGH-Z H
X
HIGH-Z H
X
X
VID
X
HIGH-Z L
X
X
X
L
10