MB84VD2218XEG Datasheet, PDF (58/63 Pages) Fujitsu Component Limited. – 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

MB84VD2218XEG/EH/2219XEG/EH-90
• Write Cycle (Note 1) (LB, UB Control) (SRAM)
Address
WE
CE1s
CE2s
LBs, UBs
DOUT
DIN
tWC
tWP
tWR
tCW
tCW
tAW
tAS
tBW
tBE
tCOE
tODW
Note 2
tDS
tDH
VALID DATA IN
Notes: 1. If OE is HIGH during the write cycle, the outputs will remain at high impedance.
2. Because I/O signals may be in the output state at this time, input signals of reverse
polarity must not be applied.
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