MB84VP24491HK Datasheet, PDF (49/70 Pages) Fujitsu Component Limited. – 128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM

MB84VP24491HK-70
• POWER DOWN PARAMETERS (32M Page mode FCRAM)
Parameter
CE2r Low Setup Time for Power Down Entry
CE2r Low Hold Time after Power Down Entry
CE1r High Hold Time following CE2r High
after Power Down Exit [SLEEP mode only]
CE1r High Hold Time following CE2r High
after Power Down Exit [not in SLEEP mode]
CE1r High Setup Time following CE2r High
after Power Down Exit
Symbol
tCSP
tC2LP
tCHH
Value
Min Max
10
—
70
—
300
—
Unit Remarks
ns
ns
µs
*1
tCHHP
1
—
µs
*2
tCHS
0
—
ns
*1 : Applicable also to power-up.
*2 : Applicable when 4M, 8M, and 16M Partial mode is programmed.
• OTHER TIMING PARAMETERS (32M Page mode FCRAM)
Parameter
CE1r High to OE Invalid Time for Standby Entry
CE1r High to WE Invalid Time for Standby Entry
CE1r High Hold Time following CE2r High after Power-up
Input Transition Time
Symbol
tCHOX
tCHWX
tCHH
tT
Value
Min Max
10
—
10
—
300
—
1
25
Unit Remarks
ns
ns
*1
µs
ns
*2
*1 : Some data might be written into any address location if tCHWX(Min) is not satisfied.
*2 : The Input Transition Time (tT) at AC testing is 5 ns as shown in below. If actual tT is longer than 5ns,
it may violate AC specification of some timing parameters.
• AC TEST CONDITIONS (32M Page mode FCRAM)
Description
Input High Level
Input Low Level
Input Timing Measurement Level
Input Transition Time
Symbol
VIH
VIL
VREF
tT
Test Setup
—
—
—
Between VIL and VIH
Value
VCCr
VSS
VCCr × 0.5
5
Unit
V
V
V
ns
Remarks
48