MB84VP24491HK Datasheet, PDF (15/70 Pages) Fujitsu Component Limited. – 128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM

MB84VP24491HK-70
• Simultaneous Operation (Dual CE) (128M Page Flash)
The device features functions that enable reading of data from one memory bank while a program or erase
operation is in progress in the other memory bank (simultaneous operation) , in addition to conventional features
(read, program, erase, erase-suspend read, and erase-suspend program) . The bank can be selected by bank
address (A21, A20) with zero latency. The device consists of the following four banks :
CE0f control: Bank A : 8 x 4 KW and 31 x 32 KW; Bank B : 96 x 32 KW
CE1f control: Bank C : 96 x 32 KW; Bank D : 8 x 4 KW and 31 x 32 KW.
The possible combinations for simultaneous operation is show as following table. ( (Refer to Figure 11 Bank-to-
Bank Read/Write Timing Diagram.)
• Simultaneous Operation for Dual CE (128M Page Flash)
Case
Bank 1 (CE0f) Status Bank 2 (CE0f) Status Bank 1 (CE1f) Status
16 Mbit
48 Mbit
48 Mbit
1
Read mode
Read mode
Read mode
2
Autoselect mode
Read mode
Read mode
3
Read mode
Autoselect mode
Read mode
4
Read mode
Read mode
Autoselect mode
5
Read mode
Read mode
Read mode
6
Program mode
Read mode
Read mode
7
Read mode
Program mode
Read mode
8
Read mode
Read mode
Program mode
9
Read mode
Read mode
Read mode
10
Erase Mode
Read mode
Read mode
11
Read mode
Erase Mode
Read mode
12
Read mode
Read mode
Erase Mode
13
Read mode
Read mode
Read mode
14*
Multiple Erase Mode Multiple Erase Mode
Read mode
15*
Multiple Erase Mode
Read mode
Multiple Erase Mode
16*
Multiple Erase Mode
Read mode
Read mode
17*
Read mode
Multiple Erase Mode Multiple Erase Mode
18*
Read mode
Multiple Erase Mode
Read mode
19*
Read mode
Read mode
Multiple Erase Mode
20*
Multiple Erase Mode Multiple Erase Mode Multiple Erase Mode
21*
Multiple Erase Mode Multiple Erase Mode
Read mode
22*
Multiple Erase Mode
Read mode
Multiple Erase Mode
23*
Read mode
Multiple Erase Mode Multiple Erase Mode
Bank 2 (CE1f) Status
16 Mbit
Read mode
Read mode
Read mode
Read mode
Autoselect mode
Read mode
Read mode
Read mode
Program mode
Read mode
Read mode
Read mode
Erase Mode
Read mode
Read mode
Multiple Erase Mode
Read mode
Multiple Erase Mode
Multiple Erase Mode
Read mode
Multiple Erase Mode
Multiple Erase Mode
Multiple Erase Mode
* : Multiple Erase Mode requires multiple sector erase sequence which is followed by writes of the Sector Erase
command to addresses in other sectors desired to be concurrently erased. The time between writes must be
less than “tTOW”.
14