MB84VP24491HK Datasheet, PDF (10/70 Pages) Fujitsu Component Limited. – 128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM

MB84VP24491HK-70
s DC CHARACTERISTICS
Parameter
Input Leakage Current
Output Leakage Current
RESET Inputs Leakage
Current (Flash)
WP/ACC Acceleration
Program Current (Flash)
Flash VCC Active Current
(Read) *¹
Flash VCC Active Current *²
Flash VCC Current (Standby)
Flash VCC Current
(Standby, Reset)
Flash VCC Current
(Automatic Sleep Mode) *³
Flash VCC Active Current
(Read-while-Program) *⁵
Flash VCC Active Current
(Read-while-Erase) *⁵
Flash VCC Active Current
(Erase Suspend Program)
Flash VCC Active Current
(Page Mode Read)
FCRAM VCC Active Current *⁸
FCRAM VCC Page Read
Current *⁸
FCRAM VCC Standby
Current *⁸
FCRAM VCC Power Down
Current *⁸
Sym-
bol
Conditions
ILI VIN = VSS to VCCf, VCCr
ILO VOUT = VSS to VCCf, VCCr, Output Disable
ILIT VCCf = VCCf Max, RESET = 12.5 V
Value
Unit
Min Typ Max
–1.0 — +1.0 µA
–1.0 — +1.0 µA
— — 35 µA
ILIA VCCf = VCCf Max, WP/ACC = VACC Max
— — 20 mA
CE (CE0f or CE1f) = VIL,
OE= VIH
ICC1f
CE (CE0f or CE1f) = VIL,
OE= VIH
f = 10 MHz
f = 5 MHz
— — 45 mA
— — 25 mA
ICC2f CE (CE0f or CE1f) = VIL, OEf= VIH
— — 25 mA
ISB1f
VCCf = VCCf Max,CE0f, CE1f = VCCf ±0.3 V
RESET= VCCf ±0.3 V, WP/ACC =VCCf ±0.3 V
—
1
5 µA
ISB2f VCCf = VCCf Max, RESET= VSS ±0.3 V
— 1 5 µA
VCCf = VCCf Max, CE0f, CE1f= VSS ±0.3 V,
ISB3f RESET= VCCf ±0.3 V,
VIN = VCCf ±0.3 V or VSSf±0.3 V
— 1 5 µA
ICC3f CE (CE0f or CE1f) = VIL, OE= VIH
— — 45 mA
ICC4f CE (CE0f or CE1f) = VIL, OE= VIH
— — 45 ^mA
ICC5f CE (CE0f or CE1f) = VIL, OE= VIH
—
ICC6f
CE (CE0f or CE1f) = VIL, OE = VIH,
8 Word Read
—
ICC1r VCCr = VCCr Max,
tRC / tWC =Min —
CE1r = VIL, CE2r = VIH,
ICC2r _{VIN = VIH or VIL, IOUT = 0mA*}⁷ tRC / tWC =1 µs —
VCCr = VCCr Max, VIN = VIH or VIL,
ICC3r CE1r = VIL, CE2r = VIH, IOUT = 0 mA *⁷,
—
tPRC=Min
ISB1r
VCCr = VCCr Max, VIN < 0.2V or > VCCr – 0.2V
CE1r > VCCr – 0.2V, CE2r > VCCr– 0.2V
—
IDDPSr
IDDP4r ^{VCCr = VCCr Max,}
CE2r < 0.2V,
IDDP8r _{VIN = VIH or VIL}
IDDP16r
Sleep
—
4M Partial —
8M Partial —
16M Partial —
— 25 mA
— 10 mA
— 30
mA
—3
— 10 mA
— 100 µA
— 10 µA
— 45 µA
— 55 µA
— 70 µA
(Continued)
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