MB84VP24491HK Datasheet, PDF (44/70 Pages) Fujitsu Component Limited. – 128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM

MB84VP24491HK-70
4. Erase and Programing Performance (128M Page Flash)
Parameter
Sector Erase Time
Word Programming Time
Chip Programming Time
Erase/Program Cycle
Min
—
—
—
100,000
Value
Typ
0.5
6.0
50.3
—
Unit
Max
Comments
2
s
Excludes programming time
prior to erasure
100
µs
Excludes system-level
overhead
200
s
Excludes system-level
overhead
—
cycle
—
Note: Typical Erase conditions TA = + 25°C, VCC = 2.9 V
Typical Program conditions TA = + 25°C, VCC = 2.9 V, Data = checker
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