MB84VP24491HK Datasheet, PDF (11/70 Pages) Fujitsu Component Limited. – 128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM

MB84VP24491HK-70
(Continued)
Parameter
Sym-
bol
Conditions
Value
Unit
Min
Typ
Max
Input Low Level
VIL
—
–0.3
— VCC × 0.2 *⁶ V
Input High Level
VIH
—
VCC × 0.8 — VCC+ 0.2 *⁶ V
Voltage for Sector Protection, and
Temporary Sector Unprotection
VID
—
(RESET) *⁴
11.5
12
12.5
V
Voltage for WP/ACC Sector
Protection/Unprotection and
VACC
—
Program Acceleration *⁴
8.5
9.0
9.5
V
Output Low Voltage Level
VOLf
VCCf = VCCf Min,
IOL = 0.1 mA
Flash
—
VOLr
VCCr = VCCr Min,
IOL = 1.0 mA
FCRAM
—
— VCCf × 0.15 V
—
0.4
V
Output High Voltage Level
VOHf
VCCf = VCCf Min,
IOH = –0.1 mA
Flash VCCf × 0.85 —
VOHr
VCCr = VCCr Min,
IOH = –0.5 mA
FCRAM
2.4
—
—
V
—
V
Flash Low VCCf Lock-Out Voltage
VLKO
—
2.3
2.4
2.5
V
*1: The ICC current listed includes both the DC operating current and the frequency dependent component.
*2: ICC active while Embedded Algorithm (program or erase) is in progress.
*3: Automatic sleep mode enables the low power mode when address remains stable for 150 ns.
*4: Applicable for only VCCf applying.
*5: Embedded Algorithm (program or erase) is in progress. (@5 MHz)
*6: VCC indicates lower of VCCf or VCCr.
*7: FCRAM Characteristics are measured after following POWER-UP timing.
*8: IOUT depends on the output load conditions.
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