MB84VD2008 Datasheet, PDF (27/30 Pages) Fujitsu Component Limited. – 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM

MB84VD2008-10/MB84VD2009-10
s ERASE AND PROGRAMMING PERFORMANCE (Flash)
Parameter
Sector Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
Erase/Program Cycle
Min.
—
—
—
—
100,000
Limits
Typ.
1
8
16
8.4
—
Max.
10
300
360
TBD
—
Unit
Comment
sec
Excludes programming time
prior to erasure
µs _{Excludes system-level}
µs ^overhead
sec
Excludes system-level
overhead
cycles
s DATA RETENTION CHARACTERISTICS (SRAM)
Parameter
Symbol
Parameter Description
VDH Data Retention Supply Voltage
IDDS2 Standby Current
tCDR Chip Deselect to Data Retention Mode Time
tR
Recovery Time
* : 5 µA (Max.) at TA = –20°C to +40°C
Min.
2.0
VDH = 3.0 V —
0
5
Typ.
—
—
—
—
Max.
3.6
50*
—
—
Unit
V
µA
ns
ms
• CE1s Controlled Data Retention Mode
VCCs
2.7 V
DATA RETENTION MODE
VIH
CEs
GND
See Note 1
tCDR
VCCS –0.2 V
See Note 1
tR
Notes:1.)When CEs is operating at the VIH min. level (2.2 V), the standby current is given by ISB1s during the
transition of VCCs from 3.6 to 2.2 V.
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